Dynamics of a pair of electron and hole in semiconductor superlattice under an intense electric field

被引：0
|
作者：
阎结昀 [1 ]
机构：
[1] Department of Physics, Tsinghua University
来源：
Chinese Physics B | 2008年 / 17卷 / 12期
关键词：
semiconductor superlattice; dynamic localization; quasi energy;
D O I：
暂无
中图分类号：
O471 [半导体理论];
学科分类号：
070205 ; 080501 ; 0809 ; 080903 ;
摘要：
This paper investigates the behaviour of a pair of electron and hole in semiconductor superlattice under an external electric field with the consideration of Coulomb interaction. By numerically calculating the corresponding probability in the nearest neighbour tight binding approximation, we find that the single electron (or the hole) can not be dynamically localized due to the Coulomb interaction, while the dynamic localization of exciton (the pair of the electron and hole) still exists. Moreover we find that with the increase of the intensity of electric field, the exciton can be dynamically localized more completely.
引用
收藏
页码：4640 / 4644
页数：5
相关论文
共 50 条
  • [1] Dynamics of a pair of electron and hole in semiconductor superlattice under an intense electric field
    Department of Physics, Tsinghua University, Beijing 100084, China
    Chin. Phys., 2008, 12 (4640-4644):
  • [2] Dynamics of a pair of electron and hole in semiconductor superlattice under an intense electric field
    Yan Jie-Yun
    CHINESE PHYSICS B, 2008, 17 (12) : 4640 - 4644
  • [3] DYNAMICS OF ELECTRON-HOLE PAIR RECOMBINATION IN SEMICONDUCTOR CLUSTERS
    ONEIL, M
    MAROHN, J
    MCLENDON, G
    JOURNAL OF PHYSICAL CHEMISTRY, 1990, 94 (10): : 4356 - 4363
  • [4] Chaotic electron dynamics in a semiconductor superlattice
    Moghadam, Fatemeh
    Esmaeilzadeh, Mahdi
    2007 JOINT 32ND INTERNATIONAL CONFERENCE ON INFRARED AND MILLIMETER WAVES AND 15TH INTERNATIONAL CONFERENCE ON TERAHERTZ ELECTRONICS, VOLS 1 AND 2, 2007, : 521 - +
  • [5] Electron-photon drag effect in a semiconductor superlattice subjected to a high electric field
    D. V. Zav’yalov
    S. V. Kryuchkov
    E. I. Kukhar’
    Semiconductors, 2007, 41 : 704 - 707
  • [6] Electron-photon drag effect in a semiconductor superlattice subjected to a high electric field
    Zav'yalov, D. V.
    Kryuchkov, S. V.
    Kukhar', E. I.
    SEMICONDUCTORS, 2007, 41 (06) : 704 - 707
  • [7] Semiconductor nanohelix in electric field: A superlattice of the new type
    O. V. Kibis
    M. E. Portnoi
    Technical Physics Letters, 2007, 33 : 878 - 880
  • [8] The evolution of the electric field in an optically excited semiconductor superlattice
    Lisauskas, A
    Blöser, C
    Hummel, AB
    Sachs, R
    Roskos, HG
    Juozapavicius, A
    Valusis, G
    Köhler, K
    PHYSICA STATUS SOLIDI C - CONFERENCES AND CRITICAL REVIEWS, VOL 2, NO 8, 2005, 2 (08): : 3055 - 3058
  • [9] Semiconductor nanohelix in electric field: A superlattice of the new type
    Kibis, O. V.
    Portnoi, M. E.
    TECHNICAL PHYSICS LETTERS, 2007, 33 (10) : 878 - 880
  • [10] Superlattice properties of semiconductor nanohelices in a transverse electric field
    Kibis, O. V.
    Portnoi, M. E.
    PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES, 2008, 40 (06): : 1899 - 1901
12345