A radiation-hardened-by-design technique for improving single-event transient tolerance of charge pumps in PLLs

被引:3
|
作者
赵振宇 [1 ]
张民选 [1 ]
陈书明 [1 ]
陈吉华 [1 ]
李俊丰 [1 ]
机构
[1] School of Computer Science,National University of Defense Technology
基金
中国国家自然科学基金;
关键词
charge pump; phase-locked loop; RHBD; single-event transient;
D O I
暂无
中图分类号
TN432 [场效应型];
学科分类号
080903 ; 1401 ;
摘要
A radiation-hardened-by-design (RHBD) technique for phase-locked loops (PLLs) has been developed for single-event transient (SET) mitigation.By presenting a novel SET-resistant complementary current limiter (CCL) and implementing it between the charge pump (CP) and the loop filter (LPF),the PLL’s singleevent suscepti-bility is significantly decreased in the presence of SETs in CPs,whereas it has little impact on the loop parameters in the absence of SETs in CPs.Transistor-level simulation results show that the CCL circuit can significantly reduce the voltage perturbation on the input of the voltage-controlled oscillator (VCO) by up to 93.1% and reduce the recovery time of the PLL by up to 79.0%.Moreover,the CCL circuit can also accelerate the PLL recovery procedure from loss of lock due to phase or frequency shift,as well as a single-event strike.
引用
收藏
页码:108 / 112
页数:5
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