A 6-9 GHz ultra-wideband CMOS PA for China's ultra-wideband standard

被引:0
作者
高振东 [1 ]
李志强 [1 ]
张海英 [1 ]
机构
[1] Institute of Microelectronics,Chinese Academy of Sciences
关键词
power amplifier; CMOS; ultra-wideband;
D O I
暂无
中图分类号
TN722.75 [];
学科分类号
080902 ;
摘要
A 6-9 GHz ultra-wideband CMOS power amplifier(PA) for the high frequency band of China’s UWB standard is proposed.Compared with the conventional band-pass filter wideband input matching methodology,the number of inductors is saved by the resistive feedback complementary amplifying topology presented.The output impendence matching network utilized is very simple but efficient at the cost of only one inductor.The measured S;far exceeds that of similar work.The PA is designed and fabricated with TSMC 0.18μm 1P6M RF CMOS technology. The implemented PA achieves a power gain of 10 dB with a ripple of 0.6 dB,and S;<-10 dB over 6-9 GHz,S;<-35 dB over 4-10 GHz.The measured output power at the 1 dB compression point is over 3.5 dBm from 6 to 9 GHz. The PA dissipates a total power of 21 mW from a 1.8 V power supply.The chip size is 1.1×0.8 mm;.
引用
收藏
页码:104 / 107
页数:4
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