Mechanism of floating body effect mitigation via cutting off source injection in a fully-depleted silicon-on-insulator technology

被引：0
作者：
黄鹏程 [1 ]
陈书明 [1 ,2 ]
陈建军 [1 ]
机构：
[1] College of Computer National University of Defense Technology
[2] National Laboratory for Parallel and Distributed Processing National University of Defense Technology
来源：
Chinese Physics B | 2016年 / 25卷 / 03期
基金：
中国国家自然科学基金;
关键词：
floating body effect; in-line stacking; silicon-on-insulator; source injection;
D O I：
暂无
中图分类号：
TN304.12 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
In this paper, the effect of floating body effect(FBE) on a single event transient generation mechanism in fully depleted(FD) silicon-on-insulator(SOI) technology is investigated using three-dimensional technology computer-aided design(3DTCAD) numerical simulation. The results indicate that the main SET generation mechanism is not carrier drift/diffusion but floating body effect(FBE) whether for positive or negative channel metal oxide semiconductor(PMOS or NMOS). Two stacking layout designs mitigating FBE are investigated as well, and the results indicate that the in-line stacking(IS) layout can mitigate FBE completely and is area penalty saving compared with the conventional stacking layout.
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收藏
页码：287 / 293
页数：7
相关论文
共 3 条
  • [1] Mirror image:newfangled cell-level layout technique for single-event transient mitigation[J]. Pengcheng Huang,Shuming Chen,Zhengfa Liang,Jianjun Chen,Chunmei Hu,Yibai He. Chinese Science Bulletin. 2014(23)
  • [2] Chen J J,Chen S M,Liang B,Deng K F. Chin. Phys. B . 2012
  • [3] Heidel D F,Marshall P W,Pellish J A,Rodbell K P,La Bel K A,Schwank J R,Rauch S E,Hakey M C,Berg M D,Castaneda C M,Dodd P E,Friendlich M R,Phan A D,Seidleck C M,Shaneyfelt M R,Xapsos M A. IEEE Trans Nucl.Sci . 2009
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