A three-dimensional breakdown model of SOI lateral power transistors with a circular layout

被引：0

作者：

郭宇锋 ^{[1
,2
]}

王志功 ^{[1
]}

许健 ^{[3
]}

机构：

[1] Institute of RF-& OE-ICs,Southeast University

[2] Nanjing University of Posts and Telecommunications

[3] Department of Computer Science & Information Engineering,Asia University

来源：

半导体学报 | 2009年 / 30卷 / 11期

关键词：

SOI; three dimensional; breakdown voltage; model; RESURF;

D O I：

暂无

中图分类号：

TN323.4 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

This paper presents an analytical three-dimensional breakdown model of SOI lateral power devices with a circular layout.The Poisson equation is solved in cylindrical coordinates to obtain the radial surface potential and electric field distributions for both fully-and partially-depleted drift regions.The breakdown voltages for N+N and P+N junctions are derived and employed to investigate the impact of cathode region curvature.A modified RESURF criterion is proposed to provide a design guideline for optimizing the breakdown voltage and doping concentration in the drift region in three dimensional space.The analytical results agree well with MEDICI simulation results and experimental data from earlier publications.

引用

页码：51 / 54

页数：4

共 4 条

[1] 具有非平面埋氧层的新型SOI材料的制备 [J].

郭宇锋 ;

李肇基 ;

张波 ;

刘勇 .

半导体学报, 2007, (09) :1415-1419

[2] A new analytical model for optimizing SOI LDMOS with step doped drift region [J].

Guo, Yufeng ;

Li, Zhaoji ;

Zhang, Bo .

MICROELECTRONICS JOURNAL, 2006, 37 (09) :861-866

[3]

A novel analytical physical model for thin film SOI RESURF structure based on2-D Poisson equation .2 Li W H,Luo J S. Proc ISPSD . 1998

[4]

A New Two DimensionalAnalytical Breakdown Model of SOI RESURF Devices .2 Guo Yufeng,Li Zhaoji,Zhang Bo. Communications,Circuits and Systems,ICCCAS 2007 .

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