Microstructure and Ferroelectric Properties of (Bi0.9Ho0.1)3.999Ti2.997V0.003O12 Thin Films Prepared by Sol-gel Method for Nonvolatile Memory

被引：0
作者：
Chengju Fu1)
机构：
来源：
Journal of Materials Science & Technology | 2010年 / 26卷 / 08期
基金：
中国国家自然科学基金;
关键词：
(Bi0.9Ho0.1)3.999Ti2.997V0.003O12 thin films; Sol-gel method; Co-substitution; Ferroelectric properties; Dielectric properties;
D O I：
暂无
中图分类号：
TB381 [智能材料];
学科分类号：
080501 ; 1405 ;
摘要：
The (Bi0.9Ho0.1)3.999Ti2.997V0.003O12 (BHTV) films have been prepared on Pt/Ti/SiO2/Si substrates by solgel method. The microstructure and ferroelectric properties of the BHTV films were investigated. The BHTV films show a single phase of Bi-layered Aurivillius structure and dense microstructure. The Ho3+/V5+ cosubstitution can effectively improve the ferroelectric properties. The BHTV film exhibits good ferroelectric properties with 2Pr of 47.6℃/cm2, 2Ec of 265 kV/cm (at applied field of 420 kV/cm), dielectric constant of 305, dielectric loss of 0.031 (at 1 MHz), good insulting behavior, as well as the fatigue-free behavior.
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页码：679 / 681
页数：3
相关论文
共 2 条
  • [1] Ferroelectric properties of Bi 3.4 Ho 0.6 Ti 3 O 12 thin films prepared by sol-gel method[J] . ChengJu Fu,ZhiXiong Huang,Jie Li,DongYun Guo.Science in China Series E: Technological Sciences . 2008 (9)
  • [2] Ferroelectricity in the compound Bi4Ti3O12. P. H. Fang,C. R. Robbins,B. Aurivillius. Physical Review . 1962
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