W-dopedIn2O3nanofiberoptoelectronicneuromorphictransistorswithsynergisticsynapticplasticity

被引：0

作者：

杨洋 ^{[1
]}

傅传玉 ^{[1
]}

柯硕 ^{[1
]}

崔航源 ^{[1
]}

方晓 ^{[1
]}

万昌锦 ^{[1
]}

万青 ^{[1
,2
]}

机构：

[1] School of Electronic Science & Engineering, and Collaborative Innovation Center of Advanced Microstructures,Nanjing University

[2] School of Micro-Nano Electronics, Hangzhou Global Scientific and Technological Innovation Center, Zhejiang University

来源：

ChinesePhysicsB | 2023年 / 32卷 / 11期

关键词：

D O I：

暂无

中图分类号：

TN32 [半导体三极管（晶体管）];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Neuromorphic devices that mimic the information processing function of biological synapses and neurons have attracted considerable attention due to their potential applications in brain-like perception and computing. In this paper,neuromorphic transistors with W-doped In2O3 nanofibers as the channel layers are fabricated and optoelectronic synergistic synaptic plasticity is also investigated. Such nanofiber transistors can be used to emulate some biological synaptic functions, including excitatory postsynaptic current（EPSC）, long-term potentiation（LTP）, and depression（LTD）. Moreover, the synaptic plasticity of the nanofiber transistor can be synergistically modulated by light pulse and electrical pulse.At last, pulsed light learning and pulsed electrical forgetting behaviors were emulated in 5×5 nanofiber device array.Our results provide new insights into the development of nanofiber optoelectronic neuromorphic devices with synergistic synaptic plasticity.

引用

页码：695 / 699

页数：5

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