Effect of Sn-doping on the structural,electrical and magnetic properties of(In0.95-xSnxFe0.05)2O3 films

被引：1
|
作者：
邢鹏飞 [1 ]
陈延学 [2 ]
孙少华 [1 ]
机构：
[1] Department of Applied Physics,Faculty of Science,Tianjin University
[2] School of Physics,Shandong University
来源：
Journal of Semiconductors | 2013年 / 34卷 / 02期
基金：
中国国家自然科学基金;
关键词：
pulsed laser deposition; room-temperature ferromagnetism; (In0.95-xSnxFe0.05)2O3 films; carrier concentration; bound magnetic polaron model;
D O I：
暂无
中图分类号：
TN304.2 [化合物半导体];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Room-temperature ferrornagnetism was observed in(In0.95-xSnxFe0.05)2O3(x = 0-0.09) films deposited by pulsed laser deposition.XRD results give a direct proof that both Sn and Fe ions have been incorporated into the In2O3lattice.The carrier concentration in the films is obviously increased by the Sn-doping,while the ferromagnetic properties are rarely changed.We think that in our Fe-doped In2O3films,the oxygen vacancy-related bound magnetic polaron model,rather than the carrier-mediated RKKY coupling,is the main mechanism for the observed ferromagnetism.
引用
收藏
页码：15 / 18
页数：4
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