Infrared studies of oxygen-related complexes in electron-irradiated Cz-Si

被引：0

作者：

陈贵锋

阎文博

陈洪建

崔会英

李养贤

机构：

[1] SchoolofMaterialScienceandEngineering,HebeiUniversityofTechnology

来源：

Chinese Physics B | 2009年 / 18卷 / 07期

关键词：

electron irradiation; Cz-Si; defect complex; annealing processes;

D O I：

暂无

中图分类号：

TN304.2 [化合物半导体];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

This paper investigates the infrared absorption spectra of oxygen-related complexes in silicon crystals irradiated with electron(1.5MeV) at 360 K.Two groups of samples with low [Oi]=6.9×1017cm 3 and high [Oi]=1.06×1018cm3 were used.We found that the concentration of the VO pairs have different behaviour to the annealing temperature in different concentration of oxygen specimen,it is hardly changed in the higher concentration of oxygen specimen.It was also found that the concentration of VO 2 in lower concentration of oxygen specimen gets to maximum at 450 ℃ and then dissapears at500 ℃,accompanied with the appearing of VO 3.For both kinds of specimens,the concentration of VO 3 reachs to maximum at 550 ℃ and does not disappear completely at 600 ℃.

引用

页码：2988 / 2991

页数：4

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