A Ku-band wide-tuning-range high-output-power VCO in InGaP/GaAs HBT technology

被引：0

作者：

张金灿 ^{[1
]}

张玉明 ^{[2
]}

吕红亮 ^{[2
]}

张义门 ^{[2
]}

刘博 ^{[1
]}

张雷鸣 ^{[1
]}

向菲 ^{[1
]}

机构：

[1] Electrical Engineering College Henan University of Science and Technology

[2] School of Microelectronics Xidian University Key Laboratory of Wide Band-Gap Semiconductor Materials and Devices

来源：

Journal of Semiconductors | 2015年 / 06期

关键词：

voltage controlled oscillator; InGaP/GaAs HBT; Ku band; wide tuning range; high output power;

D O I：

暂无

中图分类号：

TN322.8 []; TN752 [振荡器];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ; 080904 ;

摘要：

A fully integrated Ku-band voltage controlled oscillator(VCO) is presented in an InGaP/GaAs heterojunction bipolar transistor(HBT) technology. To achieve the wide tuning range(TR), the VCO employs a Colpitts configuration, and the VCO simultaneously achieves high output power. The implemented VCO demonstrates an oscillation frequency range from 12.82 to 14.97 GHz, a frequency TR of 15.47%, an output power from 0.31 to6.46 d Bm, and a phase noise of 94:9 d Bc/Hz at 1 MHz offset from 13.9 GHz center frequency. The VCO consumes 52.75 m W from 5 V supply and occupies an area of 0.81 0.78 mm2. Finally, the figures-of-merit for VCOs is discussed.

引用

页码：160 / 164

页数：5