Effects of vertical electric field and compressive strain on electronic properties of bilayer ZrS

Using first-principles calculations,including Grimme D2 method for van der Waals interactions,we investigate the tuning electronic properties of bilayer zirconium disulfides(ZrS;/ subjected to vertical electric field and normal compressive strain.The band gap of ZrS;bilayer can be flexibly tuned by vertical external electric field.Due to the Stark effect,at critical electric fields about 1.4 V/?,semiconducting-metallic transition presents.In addition,our results also demonstrated that the compressive strain has an important impact on the electronic properties of ZrS;bilayer sheet.The widely tunable band gaps confirm possibilities for its applications in electronics and optoelectronics.