High power single mode 980 nm AlGaInAs/AlGaAs quantum well lasers with a very low threshold current

被引：0
|
作者：
董振 [1 ]
王翠鸾 [1 ]
井红旗 [1 ]
刘素平 [1 ]
马骁宇 [1 ]
机构：
[1] National Engineering Research Center for Optoelectronic Devices, Institute of Semiconductors, Chinese Academy of Sciences
来源：
Journal of Semiconductors | 2013年 / 11期
关键词：
semiconductor laser; low threshold; ridge waveguide; single mode;
D O I：
暂无
中图分类号：
TN248 [激光器];
学科分类号：
0803 ; 080401 ; 080901 ;
摘要：
To achieve low threshold current as well as high single mode output power,a graded index separate confinement heterostructure(GRIN-SCH)AlGaInAs/AlGaAs quantum well laser with an optimized ridge waveguide was fabricated.The threshold current was reduced to 8 mA.An output power of 76 mW was achieved at100 mA current at room temperature,with a slope efficiency of 0.83 W/A and a horizon divergent angle of 6.3.The maximum single mode output power of the device reached as high as 450 mW.
引用
收藏
页码：74 / 77
页数：4
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