Si-Based Materials and Devices

被引:0
|
作者
Chuanbo Li [1 ]
Jinsong Xia [2 ]
Linwei Yu [3 ]
机构
[1] Institute of Semiconductors, CAS
[2] Huazhong University of Science and Technology
[3] Nanjing University
关键词
Si-Based Materials and Devices;
D O I
暂无
中图分类号
TN304.12 [];
学科分类号
0805 ; 080501 ; 080502 ; 080903 ;
摘要
J. Semicond. 2018, Vol. 39, Issue 6With the increase of integration density in ICs which is mainly based on silicon materials, the gate lengths of transistors are now scaled down to 7 nm, leading to fundamental challenges to keep up with the Moore’s law. In recent years, many researchers have tried to use the nano-sized Si structure or introduce groupⅣalloys to address the light source issue and establish all Si-based
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页码:106 / 106
页数:1
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