Body Bias Dependence of Bias Temperature Instability(BTI) in Bulk Fin FET Technology

被引：0

作者：

Jiayang Zhang ^{[1
]}

Zirui Wang ^{[1
]}

Runsheng Wang ^{[1
]}

Zixuan Sun ^{[1
]}

Ru Huang ^{[1
]}

机构：

[1] Institute of Microelectronics, Peking University

来源：

Energy & Environmental Materials | 2022年 / 5卷 / 04期

关键词：

bias temperature instability(BTI); body effect; FinFET; reliability;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

In this article, the body bias dependence of the bias temperature instability(BTI) in bulk FinFETs is experimentally studied, under different test conditions for the first time. In contrast to the traditional understanding that changing body bias has little impact on BTI degradation in Fin FETs due to its weak body effect, it is observed that it actually has non-negligible impacts. And a forward body bias(FBB) can reduce the BTI degradation in FinFETs, which is opposite with the trend in planar devices. The underlying physics is found due to the trade-off between two competing factors. The results are helpful for understanding and modeling reliability in FinFETs.

引用

页码：1200 / 1203

页数：4