High peak-to-valley current ratio In;Ga;As/AlAs resonant tunneling diode with a high doping emitter

被引：0

作者：

王伟 ^{[1
,2
]}

孙浩 ^{[1
]}

滕腾 ^{[1
,2
]}

孙晓玮 ^{[1
]}

机构：

[1] Key Laboratory of Terahertz Solid-State Technology,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

[2] University of Chinese Academy of Sciences

来源：

Journal of Semiconductors | 2012年 / 12期

关键词：

resonant tunneling diode; Ⅰ-Ⅴcharacteristics; peak-to-valley current ratio; equivalent circuit; S-parameters;

D O I：

暂无

中图分类号：

TN312.2 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

An In;Ga;As/AlAs resonant tunneling diode（RTD） with a high doping emitter is designed and fabricated using air bridge technology.The RTD exhibits a high peak-to-valley current ratio（PVCR） of more than 40 at room temperature,with a peak current density of 24 kA/cm;.The extraction of device parameters from DC and microwave measurements is presented together with an RTD equivalent circuit.The high PVCR RTD with small intrinsic capacitance is favorable for microwave/THz applications.

引用

页码：23 / 26

页数：4

共 3 条

[1] InP基RTD特性的数值模拟研究
王伟
孙浩
孙晓玮
徐安怀
齐鸣
[J]. 固体电子学研究与进展, 2010, 30 (03) : 317 - 322+332
[2] InP-base resonant tunneling diodes[J]. 韩春林,陈辰,邹鹏辉,张杨,曾一平,薛舫时,高建峰,张政,耿涛.半导体学报. 2009(06)
[3] Barrier thickness dependence of peak current density in GaInAs/AlAs/InP resonant tunneling diodes by MOVPE
Miyamoto, Y
Tobita, H
Oshima, K
Furuya, K
[J]. SOLID-STATE ELECTRONICS, 1999, 43 (08) : 1395 - 1398

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