Numerical investigation of a double-junction a:Si Ge thin-film solar cell including the multi-trench region

被引：0

作者：

K.Kacha ^{[1
]}

F.Djeffal ^{[1
,2
]}

H.Ferhati ^{[1
]}

D.Arar ^{[1
]}

M.Meguellati ^{[1
]}

机构：

[1] LEA, Department of Electronics, University of Batna

[2] LEPCM, University of Batna

来源：

Journal of Semiconductors | 2015年 / 06期

关键词：

amorphous; efficiency; Si Ge; thin-film; solar cell; multi-trench;

D O I：

暂无

中图分类号：

TM914.4 [太阳能电池];

学科分类号：

080502 ;

摘要：

We present a new approach based on the multi-trench technique to improve the electrical performances,which are the fill factor and the electrical efficiency. The key idea behind this approach is to introduce a new multi-trench region in the intrinsic layer, in order to modulate the total resistance of the solar cell. Based on 2-D numerical investigation and optimization of amorphous Si Ge double-junction(a-Si:H/a-Si Ge:H) thin film solar cells, in the present paper numerical models of electrical and optical parameters are developed to explain the impact of the multi-trench technique on the improvement of the double-junction solar cell electrical behavior for high performance photovoltaic applications. In this context, electrical characteristics of the proposed design are analyzed and compared with conventional amorphous silicon double-junction thin-film solar cells.

引用

页码：57 / 61

页数：5

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