High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition

被引：0

作者：

郭红雨 ^{[1
,2
]}

吕元杰 ^{[1
]}

顾国栋 ^{[2
]}

敦少博 ^{[1
]}

房玉龙 ^{[1
]}

张志荣 ^{[1
]}

谭鑫 ^{[1
]}

宋旭波 ^{[1
]}

周幸叶 ^{[1
]}

冯志红 ^{[1
]}

机构：

[1] National Key Laboratory of ASIC,Hebei Semiconductor Research Institute

[2] Hebei Semiconductor Research Institute

来源：

Chinese Physics Letters | 2015年 / 11期

基金：

中国国家自然科学基金;

关键词：

GaN; High-Frequency AlGaN/GaN High-Electron-Mobility Transistors with Regrown Ohmic Contacts by Metal-Organic Chemical Vapor Deposition;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Nonalloyed ohmic contacts regrown by metal-organic chemical vapor deposition are performed on AlGaN/GaN high-electron-mobility transistors.Low ohmic contact resistance of 0.15Ω·mm is obtained.It is found that the sidewall obliquity near the regrown interface induced by the plasma dry etching has great influence on the total contact resistance.The fabricated device with a 100-nm T-shaped gate demonstrates a maximum drain current density of 0.95 A/mm at V;= 1 V and a maximum peak extrinsic transcondutance G;of 216mS/mm.Moreover,a current gain cut-off frequency f;of 115 GHz and a maximum oscillation frequency f;of 127 GHz are achieved.

引用

页码：170 / 172

页数：3