Silicon-on-Insulator 1×2 Y-Junction Optical Switch Based on Waveguide-Vanishing Effect

被引:0
作者
赵策洲
机构
关键词
SOI; Integrated optics; Y junction; Optical switch;
D O I
暂无
中图分类号
TN25 [波导光学与集成光学];
学科分类号
0702 ; 070207 ;
摘要
The silicon-on-insulator(SOI) 1 × 2 Y-junction optical waveguide switch has been proposed and fabricated, which is based on the large cross-ction single--mode rib waveguide condition, the waveguide--vanishing effect and the free-carrier plasma dispersion effect. The SOI switch utilizes silicon and silicon dioxide thermal bonding and back--polishing. The insertion loss and extinction ratio of the device are measured to be less than 4. 78 dB and 20. 8dB respectively at a wavelength of 1. 3pm and an injection current of 45mA. The response time is about 160us.
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页码:10 / 12
页数:3
相关论文
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