Enhancement of light output powers of GaN-based light emitting diodes with textured indium tin oxide transparent layer by using corrosive liquid

被引：0
作者：
LI Yun LI XiaoChan ZHANG Tao HE AnHe HU CanDong WANG Xin HE MiaoZHANG Yong NIU QiaoLi ZHAO LingZhi LI ShuTi CHEN XianWenKey Laboratory of Electroluminescent Devices of Guangdong Provincial Education Department Institute of Optoelectronic Materials Technology South China Normal University Guangzhou ChinaCollege of Information Science and Engineering Wuhan University of Science Technology Wuhan ChinaSanan Optoelectronics Co Ltd Xiamen China [1 ,2 ,2 ,3 ,1 ,1 ,1 ,1 ,1 ,1 ,1 ,11 ,510631 ,2 ,430081 ,3 ,361009 ]
机构：
来源：
Science China(Physics,Mechanics & Astronomy) | 2011年 / Mechanics & Astronomy)2011卷 / 10期
关键词：
GaN-based light emitting diodes (LEDs); corrosive liquid; light output power; textured ITO;
D O I：
暂无
中图分类号：
TN312.8 [];
学科分类号：
0803 ;
摘要：
In order to promote the light output powers of GaN-based light emitting diodes (LEDs), two kinds of novel corrosive liquidshave been developed in this paper to roughen the surface of the indium tin oxide (ITO) current spreading layer of LEDs. As aresult, the textured transparent ITO layer greatly enhanced the external quantum efficiency of the LEDs. Provided that a wafersample was dipped in a kind of corrosive liquid developed by us for only about 60 s, the light output powers of the LEDs canbe promoted by 24.7%, compared with conventional GaN-based LEDs. It is obvious that the presented method is simple, rapidand cost-effective.
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页码：1787 / 1790
页数：4
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