Fabrication of a monolithic 4H-SiC junction barrier schottky diode with the capability of high current

There is a great interest in monolithic 4H-Si C Junction Barrier Schottky(JBS) diodes with the capability of a high forward current for industrial power applications.In this paper,we report large-area monolithic 4H-Si C JBS diodes fabricated on a 10 μm 4H-Si C epitaxial layer doped to 6×1015 cm3.JBS diodes with an active area of 30 mm2 had a forward current of up to 330 A at a forward voltage of 5 V,which corresponds to a current density of 1100 A/cm2.A near ideal breakdown voltage of 1.6 k V was also achieved for a reverse current of up to 100 A through the use of an optimum multiple floating guard rings(MFGR) termination,which is about 87.2% of the theoretical value.The differential specific-on resistance(RSP-ON) was measured to be 3.3 m cm2,leading to a FOM(VB2/RSP-ON) value of 0.78 GW/cm2,which is very close to the theoretical limit of the tradeoff between the specific-on resistance and breakdown voltage for 4H-Si C unipolar devices.