Photoluminescence Properties of Si1-xGex/Si Strained Layer Structures

被引：0
|
作者：
PENG Yingcai(Hebei University
机构：
来源：
Semiconductor Photonics and Technology | 1996年 / 03期
关键词：
Strained Layer Superlattices; Photoluminescence Properties; Optoelectronic Devices; Quantum Wells;
D O I：
暂无
中图分类号：
TN304 [材料];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
ＰｈｏｔｏｌｕｍｉｎｅｓｃｅｎｃｅＰｒｏｐｅｒｔｉｅｓｏｆＳｉ;Ｇｅ;／ＳｉＳｔｒａｉｎｅｄＬａｙｅｒＳｔｒｕｃｔｕｒｅｓ￥ＰＥＮＧＹｉｎｇｃａｉ（ＨｅｂｅｉＵｎｉｖｅｒｓｉｔｙ，Ｂａｏｄｉｎｇ０７１００２．ＣＨＮ）Ａｂｓｔｒａｃｔ：Ｔｈｅ...
引用
收藏
页码：168 / 174
页数：7
相关论文
共 49 条
  • [21] Band structure of Si/Ge strained layer superlattice
    Qiao, Hao
    Zi, Jian
    Xu, Zhizhong
    Zhang, Kaiming
    Wuli Xuebao/Acta Physica Sinica, 1993, 42 (08): : 1317 - 1323
  • [22] Spectroscopy of intersubband transitions in Si-Si1-xGex quantum wells
    Boucaud, P
    Wu, L
    Julien, FH
    Lourtioz, JM
    Sagnes, I
    Campidelli, Y
    Prazeres, R
    Ortega, JM
    THIN SOLID FILMS, 1997, 294 (1-2) : 173 - 178
  • [23] Growth of Si/Si1_xGex/Si (x < 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
    I. P. Kazakov
    A. V. Klekovkin
    V. A. Tsvetkov
    M. A. Akmaev
    O. V. Uvarov
    Bulletin of the Lebedev Physics Institute, 2019, 46 : 5 - 8
  • [24] Tradeoff Between Hot Carrier and Negative Bias Temperature Degradations in High-Performance Si1-xGex pMOSFETs With High-k/Metal Gate Stacks
    Choi, Won-Ho
    Kang, Chang-Young
    Oh, Jung-Woo
    Lee, Byoung-Hun
    Majhi, Prashant
    Kwon, Hyuk-Min
    Jammy, Raj
    Lee, Ga-Won
    Lee, Hi-Deok
    IEEE ELECTRON DEVICE LETTERS, 2010, 31 (11) : 1211 - 1213
  • [25] ALE growth and optical characterization of ZnSe/ZnS strained quantum well structures on Si substrate
    Yokoyama, M
    Chen, NT
    JOURNAL OF CRYSTAL GROWTH, 2001, 223 (03) : 369 - 375
  • [26] Growth of Si/Si1_xGex/Si (x &lt; 0.1) Quantum Wells by Modulating Ge Molecular Flow. I. Molecular Beam Epitaxy
    Kazakov, I. P.
    Klekovkin, A. V.
    Tsvetkov, V. A.
    Akmaev, M. A.
    Uvarov, O. V.
    BULLETIN OF THE LEBEDEV PHYSICS INSTITUTE, 2019, 46 (01) : 5 - 8
  • [27] Photoluminescence properties and size distribution in laser synthesized Si nanopowders for optoelectronic devices
    Botti, S
    Coppola, R
    May, RP
    Valli, M
    JOURNAL OF APPLIED CRYSTALLOGRAPHY, 2003, 36 (01) : 632 - 635
  • [28] Fast and intense photoluminescence in a SiGe nano-layer embedded in multilayers of Si/SiGe clusters
    Mala, S. A.
    Tsybeskov, L.
    Lockwood, D. J.
    Wu, X.
    Baribeau, J. -M.
    APPLIED PHYSICS LETTERS, 2013, 103 (03)
  • [29] Effect of Temperature and Magnetic Field on Electron Mobility in SiGe/Si/SiGe-layer Structures
    Muoi, Do
    SEMICONDUCTORS, 2024, 58 (07) : 597 - 601
  • [30] CHARACTERIZATION OF SI/SIGE STRAINED-LAYER SUPERLATTICES GROWN BY AN ULTRAHIGH-VACUUM CHEMICAL-VAPOR-DEPOSITION TECHNIQUE
    CHANG, TC
    CHANG, CY
    JUNG, TG
    TSAI, WC
    HUANG, GW
    WANG, PJ
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1994, 33 (4A): : 1787 - 1792
12345