Homogeneous and inhomogeneous magnetic oxide semiconductors

被引:0
作者
李小丽 [1 ,2 ]
许小红 [1 ,2 ]
机构
[1] Key Laboratory of Magnetic Molecules & Magnetic Information Materials of Ministry of Education and School of Chemistry and Materials Science,Shanxi Normal University
[2] Research Institute of Materials Science of Shanxi Normal University and Collaborative Innovation Center for Shanxi Advanced Permanent Magnetic Materials and Technology
基金
中国国家自然科学基金;
关键词
magnetic oxide semiconductors; ferromagnetism; magnetoresistance;
D O I
暂无
中图分类号
O469 [凝聚态物理学]; TN304.7 [磁性半导体、磁阻半导体];
学科分类号
070205 ; 0805 ; 080501 ; 080502 ; 080903 ;
摘要
Magnetic oxide semiconductors are significant spintronics materials.In this article, we review recent advances for homogeneous and inhomogeneous magnetic oxide semiconductors.In the homogeneous magnetic oxide semiconductors,we focus on the various doping techniques including choosing different transition metals, codoping, non-magnetic doping,and even un-doping to realize homogeneous substitution and the clear magnetic origin.And the enhancement of the ferromagnetism is achieved by nanodot arrays engineering, which is accompanied by the tunable optical properties.In the inhomogeneous magnetic oxide semiconductors, we review some heterostructures and their magnetic and transport properties, especially magnetoresistance, which are dramatically modulated by electric field in the constructed devices.And the related mechanisms are discussed in details.Finally, we provide an overview and possible potential applications of magnetic oxide semiconductors.
引用
收藏
页码:11 / 18
页数:8
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