Monolithic Integration of GaAs-Based Resonant Tunneling Diode and High Electron Mobility Transistor

被引：0

作者：

齐海涛 ^{[1
]}

冯震 ^{[2
]}

李亚丽 ^{[2
]}

张雄文 ^{[2
]}

商耀辉 ^{[2
]}

郭维廉 ^{[1
]}

机构：

[1] School of Electronic Information Engineering, Tianjin University

[2] th Research Institute, China Electronics Technology Group Corporation

来源：

Transactions of Tianjin University | 2007年 / 04期

关键词：

resonant tunneling diode (RTD); high electron mobility transistor (HEMT); monolithic integration;

D O I：

暂无

中图分类号：

TN43 [半导体集成电路（固体电路）];

学科分类号：

080903 ; 1401 ;

摘要：

The resonant tunneling diode (RTD) is a kind of novel ultra-high speed and ultra-high frequency negative differential resistance nanoelectronic device. Integration of RTD and other three-terminal compound semiconductor devices is one important direction of high speed integrated circuit development. In this paper, monolithic integration technology of RTD and high electron mobility transistor (HEMT) based on GaAs substrate was discussed. A top-RTD and bottom-HEMT material structure was proposed and epitaxyed. Based on wet chemical etching, electron beam lithography, metal lift-off and air bridge technology, RTD and HEMT were fabricated on the same wafer. The peak-to-valley current ratio of RTD is 4 and the peak voltage is 0.5 V. The maximal transconductance is 120 mS/mm for a 0.25 μm gate length depletion mode HEMT. Current levels of two devices are basically suited. The results validate the feasibility of the designed integration process.

引用

页码：282 / 285

页数：4

共 6 条

[1]

Fabrication and characterization of GaInP/GaAs triple barrier resonant tunneling diodes grown by MOCVD[J] . Naoya Asaoka,Hiroki Funato,Michihiko Suhara,Tsugunori Okumura.Applied Surface Science . 2003 (1)

[2]

Observation of resonant tunneling action in ZnO/Zn 0.8 Mg 0.2 O devices[J] . Soumya Krishnamoorthy,Agis A Iliadis,Aravind Inumpudi,Supab Choopun,Ratnakar D Vispute,Tirumalai Venkatesan.Solid State Electronics . 2002 (10)

[3]

Monolithic 4 bit 2 GSps resonant tunneling analog-to-digital converter[J] . T.P.E. Broekaert,B. Brar,J.P.A. van der Wagt,A.C. Seabaugh,T.S. Moise,F.J. Morris,E.A. Beam,G.A. Frazier.Computer Standards ＆ Interfaces . 1999 (2)

[4]

Experimental inves- tigation of the temperature dependence of InAs-AlSb-GaSb resonant interband tunnel diodes. Xu YY,Patrick F,ChowD Het al. IEEE Transactions on Electron Devices . 2004

[5]

Si1 -xGexsputter epi- taxytechnique andits applicationto RTD. Junichi K,Atsushi H,Yoshiyuki S. Thin Solid films . 2006

[6]

InAs/GaSb/AlSb resonant tunnelingspin device concepts. David Z,Ting Y,Xavier C. Physica E:Low-Di- mensional Systems and Nanostructures . 2004

← 1 →