Effect of Oxygen Admittance Temperature on the Growth of ZnO Microcrystals by Thermal Evaporation Technique

被引：0

作者：

K.M.K. Srivatsa ^{[1
]}

Deepak Chhikara ^{[1
]}

M. Senthil Kumar ^{[1
]}

机构：

[1] Physics of Energy Harvesting Division, National Physical Laboratory, Council of Scientific & Industrial Research (CSIR), New Delhi 110012, India

来源：

Journal of Materials Science & Technology | 2012年 / 28卷 / 04期

关键词：

ZnO microcrystals; Thermal evaporation; Scanning electron microscopy; Transmission electron microscopy; Room temperature photoluminescence;

D O I：

暂无

中图分类号：

TN304.21 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Hexagonally well-faceted microcrystals of ZnO have been grown by thermal evaporation of Zn powder in oxygen ambient at 700 C under atmospheric pressure. It has been observed that the properties (size and quality) of ZnO microcrystals have a strong dependence on the reactor temperature at which the oxygen gas is admitted into the growth zone. The microcrystals grown with oxygen admittance at 450 C have a length of 1 μm and a diameter of 0.75 μm while that grown with oxygen admittance at 600 C have a length of 1.5-2 μm and a diameter of 1 μm. Room temperature photoluminescence spectra show a ultraviolet (UV) emission peak at 385 nm with a green band emission at around 500 nm. The UV-to-green band emission ratio for the microcrystals grown with oxygen admittance at 450 C is observed to be 1.25 and the ratio decreases to 0.45 for the sample grown with oxygen admittance at 600 C.

引用

页码：317 / 320

页数：4

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