Metallurgical microstructure control in metal-silicon reactions

被引：0
作者：
TU KingNing [1 ,2 ]
TANG Wei [2 ]
机构：
[1] Department of Mechanical and Biomedical Engineering, City University of Hong Kong
[2] Department of Materials Science and Engineering, University of California at Los Angeles,Los Angeles, CA 90095-1595, USA
来源：
Science China(Technological Sciences) | 2014年 / 03期
关键词：
nucleation; atomic layer reaction; nano-gap; intermetallic compound; Wagner diffusivity;
D O I：
暂无
中图分类号：
TN304.12 [];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
A comprehensive review on interfacial reactions to form silicides between metal and Si nanowire or wafer is given.Formation of silicide contacts on Si wafers or Si nanowires is a building block needed in making current-based Si devices.Thus,the microstructure control of silicide formation on the basis of kinetics of nucleation and growth has relevant applications in microelectronic technology.Repeating events of homogeneous nucleation of epitaxial silicides of Ni and Co on Si in atomic layer reaction is presented.The chemical effort on intrinsic diffusivities in diffusion-controlled layer-typed intermetallic compound growth of Ni2Si is analyzed.
引用
收藏
页码：505 / 519
页数：15
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