Recessed-gate quasi-enhancement-mode AlGaN/GaN high electron mobility transistors with oxygen plasma treatment

被引：0

作者：

何云龙 ^{[1
]}

王冲 ^{[1
]}

宓珉瀚 ^{[1
]}

郑雪峰 ^{[1
]}

张濛 ^{[2
]}

赵梦荻 ^{[1
]}

张恒爽 ^{[1
]}

陈立香 ^{[2
]}

张进成 ^{[1
]}

马晓华 ^{[1
,2
]}

郝跃 ^{[1
,2
]}

机构：

[1] Key Laboratory of Wide Band Gap Semiconductor Materials and Devices, School of Microelectronics, Xidian University

[2] School of Advanced Materials and Nanotechnology, Xidian University

来源：

Chinese Physics B | 2016年 / 11期

基金：

中国国家自然科学基金;

关键词：

AlGaN/GaN; high electron mobility transistors; recessed-gate; oxygen plasma;

D O I：

暂无

中图分类号：

TN386 [场效应器件];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

In this paper,the enhancement-mode AlGaN/GaN HEMT combined with the low damage recessed-gate etching and the optimized oxygen plasma treatment was fabricated.Scanning electron microscope/energy dispersive spectrometer（SEM/EDS） method and x-ray photoelectron spectroscopy（XPS） method were used to confirm the formation of oxides.Based on the experimental results,the obtained enhancement-mode HEMT exhibited a threshold voltage of 0.5 V,a high peak transconductance of 210 mS/mm,and a maximum drain current of 610 mA/mm at the gate bias of 4 V.Meanwhile,the on/off current ratio of enhancement-mode HEMT was as high as 10;,drain induced barrier lowering（DIBL） was as low as 5 raV/V,and subthreshold swing（SS） of 80 mV/decade was obtained.Compared with the conventional HEMT,the Schottky reverse current of enhancement-mode HEMT was three orders of magnitude lower,and the off-state breakdown voltage of which was higher.In addition,a power gain cutoff frequency（/max） of the enhancement-mode HEMT was larger than that of the conventional one.

引用

页码：474 / 479

页数：6

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