Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes

被引：0

作者：

张宁 ^{[1
]}

魏学成 ^{[1
]}

路坤熠 ^{[2
]}

冯梁森 ^{[1
]}

杨杰 ^{[1
]}

薛斌 ^{[1
]}

刘喆 ^{[1
]}

李晋闽 ^{[1
]}

王军喜 ^{[1
]}

机构：

[1] Research and Development Center for Semiconductor Lighting,Chinese Academy of Sciences

[2] Electronic Information School,Wuhan University

来源：

Chinese Physics Letters | 2016年 / 11期

基金：

中国国家自然科学基金;

关键词：

LEDs; in; it; as; InGaN; Effect of Back Diffusion of Mg Dopants on Optoelectronic Properties of InGaN-Based Green Light-Emitting Diodes; of; on;

D O I：

暂无

中图分类号：

TN312.8 [];

学科分类号：

0803 ;

摘要：

The effect of back-diffusion of Mg dopants on optoelectronic characteristics of InGaN-based green light-emitting diodes（LEDs） is investigated.The LEDs with less Mg back-diffusion show blue shifts of longer wavelengths and larger wavelengths with the increasing current,which results from the Mg-dopant-related polarization screening.The LEDs show enhanced efficiency with the decreasing Mg back-diffusion in the lower current region.Light outputs follow the power law L ∝ I;,with smaller parameter m in the LEDs with less Mg back-diffusion,indicating a lower density of trap states.The trap-assisted tunneling current is also suppressed by reducing Mgdefect-related nonradiative centers in the active region.Furthermore,the forward current-voltage characteristics are improved.

引用

页码：100 / 102

页数：3

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