Exciton–phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells

被引：1

作者：

刘雅丽 ^{[1
]}

金鹏 ^{[1
]}

刘贵鹏 ^{[1
]}

王维颖 ^{[2
]}

齐志强 ^{[3
]}

陈长清 ^{[3
]}

王占国 ^{[1
]}

机构：

[1] Key Laboratory of Semiconductor Materials Science and Beijing Key Laboratory of Low-dimensional Semiconductor Materials and Devices,Institute of Semiconductors, Chinese Academy of Sciences

[2] State Key Laboratory of Artificial Microstructure and Mesoscopic Physics, School of Physics, Peking University

[3] Wuhan National Laboratory for Optoelectronics, Huazhong University of Science and Technology

来源：

Chinese Physics B | 2016年 / 08期

基金：

中国国家自然科学基金;

关键词：

exciton–phonon coupling; AlGaN quantum wells; deep-ultraviolet photoluminescence;

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论];

学科分类号：

摘要：

The exciton-phonon interaction in Al0.4Ga0.6N/Al0.53Ga0.47N multiple quantum wells(MQWs) is studied by deepultraviolet time-integrated and time-resolved photoluminescence(PL).Up to four longitudinal-optical(LO) phonon replicas of exciton recombination are observed,indicating the strong coupling of excitons with LO phonons in the MQWs.Moreover,the exciton-phonon coupling strength in the MQWs is quantified by the Huang-Rhys factor,and it keeps almost constant in a temperature range from 10 K to 120 K.This result can be explained in terms of effects of fluctuations in the well thickness in the MQWs and the temperature on the exciton-phonon interaction.

引用

页码：397 / 400

页数：4

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