Se-alloying reducing lattice thermal conductivity of Ge0.95Bi0.05Te

被引：2

作者：

De-Zhuang Wang ^{[1
]}

Wei-Di Liu ^{[2
,3
]}

Xiao-Lei Shi ^{[2
,3
]}

Han Gao ^{[4
]}

Hao Wu ^{[1
]}

Liang-Cao Yin ^{[1
]}

Yuewen Zhang ^{[4
]}

Yifeng Wang ^{[5
]}

Xueping Wu ^{[6
]}

Qingfeng Liu ^{[1
,7
]}

Zhi-Gang Chen ^{[2
,3
]}

机构：

[1] State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University

[2] Centre for Future Materials, University of Southern Queensland,Springfield Central

[3] School of Mechanical and Mining Engineering, The University of Queensland

[4] Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University

[5] College of Materials science and engineering, Nanjing Tech University

[6] School of Chemistry and Chemical Engineering, Hefei University of Technology

[7] CAS Key Laboratory of Carbon Materials, Institute of Coal Chemistry, Chinese Academy of Sciences

来源：

Journal of Materials Science & Technology | 2022年 / 106卷 / 11期

基金：

中国国家自然科学基金; 澳大利亚研究理事会;

关键词：

D O I：

暂无

中图分类号：

TB34 [功能材料];

学科分类号：

080501 ;

摘要：

High lattice thermal conductivity of intrinsic Ge Te limits the wide application of Ge Te-based thermoelectrics. Recently, the optimization of Ge Te-based thermoelectric materials has been focusing on reducing lattice thermal conductivity via strengthening phonon scattering. In this study, we systematically studied thermoelectric properties of Se-alloyed Ge0.95Bi0.05Te via theoretical calculations, structural characterizations, and performance evaluations. Our results indicate that Se-alloying can induce dense point defects with mass/strain-field fluctuations and correspondingly enhance point defect phonon scattering of the Ge0.95Bi0.05Te matrix. Se-alloying might also change chemical bonding strength to introduce resonant states in the base frequency of Ge0.95Bi0.05Te matrix, which can strengthen Umklapp phonon scattering.Finally, a decreased lattice thermal conductivity from ～1.02 W m-1K-1 to ～0.65 W m-1K-1at 723 K is obtained in Ge0.95Bi0.05Te1-xSexpellets with increasing the Se content from 0 to 0.3. A peak figure of merit of ～1.6 at 723 K is achieved in Ge0.95Bi0.05Te0.7 Se0.3 pellet, which is ～77% higher than that of pristine Ge Te. This study extends the understanding on the thermoelectric performance of Ge Te.

引用

页码：249 / 256

页数：8

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