Se-alloying reducing lattice thermal conductivity of Ge0.95Bi0.05Te

被引：2

作者：

De-Zhuang Wang ^{[1
]}

Wei-Di Liu ^{[2
,3
]}

Xiao-Lei Shi ^{[2
,3
]}

Han Gao ^{[4
]}

Hao Wu ^{[1
]}

Liang-Cao Yin ^{[1
]}

Yuewen Zhang ^{[4
]}

Yifeng Wang ^{[5
]}

Xueping Wu ^{[6
]}

Qingfeng Liu ^{[1
,7
]}

Zhi-Gang Chen ^{[2
,3
]}

机构：

[1] State Key Laboratory of Materials-Oriented Chemical Engineering, College of Chemical Engineering, Nanjing Tech University

[2] Centre for Future Materials, University of Southern Queensland,Springfield Central

[3] School of Mechanical and Mining Engineering, The University of Queensland

[4] Key Laboratory of Material Physics of Ministry of Education, School of Physics and Microelectronics, Zhengzhou University

[5] College of Materials science and engineering, Nanjing Tech University

[6] School of Chemistry and Chemical Engineering, Hefei University of Technology

[7] CAS Key Laboratory of Carbon Materials, Institute of Coal Chemistry, Chinese Academy of Sciences

来源：

Journal of Materials Science & Technology | 2022年 / 106卷 / 11期

基金：

中国国家自然科学基金; 澳大利亚研究理事会;

关键词：

D O I：

暂无

中图分类号：

TB34 [功能材料];

学科分类号：

080501 ;

摘要：

High lattice thermal conductivity of intrinsic Ge Te limits the wide application of Ge Te-based thermoelectrics. Recently, the optimization of Ge Te-based thermoelectric materials has been focusing on reducing lattice thermal conductivity via strengthening phonon scattering. In this study, we systematically studied thermoelectric properties of Se-alloyed Ge0.95Bi0.05Te via theoretical calculations, structural characterizations, and performance evaluations. Our results indicate that Se-alloying can induce dense point defects with mass/strain-field fluctuations and correspondingly enhance point defect phonon scattering of the Ge0.95Bi0.05Te matrix. Se-alloying might also change chemical bonding strength to introduce resonant states in the base frequency of Ge0.95Bi0.05Te matrix, which can strengthen Umklapp phonon scattering.Finally, a decreased lattice thermal conductivity from ～1.02 W m-1K-1 to ～0.65 W m-1K-1at 723 K is obtained in Ge0.95Bi0.05Te1-xSexpellets with increasing the Se content from 0 to 0.3. A peak figure of merit of ～1.6 at 723 K is achieved in Ge0.95Bi0.05Te0.7 Se0.3 pellet, which is ～77% higher than that of pristine Ge Te. This study extends the understanding on the thermoelectric performance of Ge Te.

引用

页码：249 / 256

页数：8

共 42 条

[1] Nano-scale compositional oscillation and phase intergrowth in Cu2S0.5Se0.5 and their role in thermal transport
Yuyu Wei
Ping Lu
Chenxi Zhu
Kunpeng Zhao
Xun Shi
Lidong Chen
Fangfang Xu
[J]. Journal of Materials Science & Technology, 2021, 79 (20) : 222 - 229
[2] From microstructure evolution to thermoelectric and mechanical properties enhancement of SnSe
Chi Ma
Xue Bai
Qiang Ren
Hongquan Liu
Yijie Gu
Hongzhi Cui
[J]. JournalofMaterialsScience&Technology, 2020, 58 (23) : 10 - 15
[3] Electrical characteristics and detailed interfacial structures of Ag/Ni metallization on polycrystalline thermoelectric SnSe[J]. Yeongseon Kim,Younghwan Jin,Giwan Yoon,In Chung,Hana Yoon,Chung-Yul Yoo,Sang Hyun Park.Journal of Materials Science ＆ Technology. 2019(05)
[4] Realization of non-equilibrium process for high thermoelectric performance Sb-doped Ge Te[J]. Evariste Nshimyimana,Xianli Su,Hongyao Xie,Wei Liu,Rigui Deng,Tingting Luo,Yonggao Yan,Xinfeng Tang.Science Bulletin. 2018(11)
[5] Significant Enhancement of Thermoelectric Figure of Merit in BiSbTe-Based Composites by Incorporating Carbon Microfiber
Yang, Guangsai
Sang, Lina
Yun, Frank Fei
Mitchell, David R. G.
Casillas, Gilberto
Ye, Ning
See, Khay
Pei, Jun
Wang, Xungai
Li, Jing-Feng
Snyder, G. Jeffrey
Wang, Xiaolin
[J]. ADVANCED FUNCTIONAL MATERIALS, 2021, 31 (15)
[6] Enhanced thermoelectric properties of nanostructured n -type Bi 2 Te 3 by suppressing Te vacancy through non-equilibrium fast reaction[J] . Yuan Wang,Wei-Di Liu,Xiao-Lei Shi,Min Hong,Li-Jun Wang,Meng Li,Hao Wang,Jin Zou,Zhi-Gang Chen.Chemical Engineering Journal . 2020 (prep)
[7] Enhanced thermoelectric performance of In and Se co-doped GeTe compounds[J] . Yue Luo,Cui Wenlin,Zheng Shuqi,Wu Yue,Dong Ximeng,Lu Guiwu.Journal of Materials Research and Technology . 2020 (prep)
[8] Large Thermal Conductivity Drops in the Diamondoid Lattice of CuFeS2 by Discordant Atom Doping
Xie, Hongyao
Su, Xianli
Hao, Shiqiang
Zhang, Cheng
Zhang, Zhengkai
Liu, Wei
Yan, Yonggao
Wolverton, Christopher
Tang, Xinfeng
Kanatzidis, Mercouri G.
[J]. JOURNAL OF THE AMERICAN CHEMICAL SOCIETY, 2019, 141 (47) : 18900 - 18909
[9] The n- and p-type thermoelectricity property of GeTe by first-principles study[J] . Donglin Guo,Chunhong Li,Kebin Qiu,Qiqi Yang,Kejian Li,Bin Shao,Dengming Chen,Yilong Ma,Jianchun Sun,Xianlong Cao,Wen Zeng,Zhongchang Wang,Rufeng Xie.Journal of Alloys and Compounds . 2019 (C)
[10] Realizing high thermoelectric properties of SnTe via synergistic band engineering and structure engineering[J] . Raza Moshwan,Wei-Di Liu,Xiao-Lei Shi,Yun-Peng Wang,Jin Zou,Zhi-Gang Chen.Nano Energy . 2019 (C)

← 1 2 3 4 5 →