Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

被引：1
|
作者：
顾溢 [1 ]
张永刚 [1 ]
宋禹忻 [2 ]
叶虹 [2 ]
曹远迎 [1 ]
李爱珍 [1 ]
王庶民 [1 ,2 ]
机构：
[1] State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences
[2] Department of Microtechnology and Nanoscience,Chalmers University of Technology,Gothenburg SE-41296,Sweden
来源：
ChinesePhysicsB | 2013年 / 22卷 / 03期
基金：
瑞典研究理事会; 中国国家自然科学基金;
关键词：
InGaAsBi; strained quantum wells; photoluminescence;
D O I：
暂无
中图分类号：
O431.2 [量子光学];
学科分类号：
070207 ; 0803 ;
摘要：
The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.
引用
收藏
页码：512 / 515
页数：4
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