Optical properties of InGaAsBi/GaAs strained quantum wells studied by temperature-dependent photoluminescence

被引：1

作者：

顾溢 ^{[1
]}

张永刚 ^{[1
]}

宋禹忻 ^{[2
]}

叶虹 ^{[2
]}

曹远迎 ^{[1
]}

李爱珍 ^{[1
]}

王庶民 ^{[1
,2
]}

机构：

[1] State Key Laboratory of Functional Materials for Informatics,Shanghai Institute of Microsystem and Information Technology,Chinese Academy of Sciences

[2] Department of Microtechnology and Nanoscience,Chalmers University of Technology,Gothenburg SE-41296,Sweden

来源：

Chinese Physics B | 2013年 / 22卷 / 03期

基金：

中国国家自然科学基金; 瑞典研究理事会;

关键词：

InGaAsBi; strained quantum wells; photoluminescence;

D O I：

暂无

中图分类号：

O431.2 [量子光学];

学科分类号：

摘要：

The effect of bismuth on the optical properties of InGaAsBi/GaAs quantum well structures is investigated using the temperature-dependent photoluminescence from 12 K to 450 K.The incorporation of bismuth in the InGaAsBi quantum well is confirmed and found to result in a red shift of photoluminescence wavelength of 27.3 meV at 300 K.The photoluminescence intensity is significantly enhanced by about 50 times at 12 K with respect to that of the InGaAs quantum well due to the surfactant effect of bismuth.The temperature-dependent integrated photoluminescence intensities of the two samples reveal different behaviors related to various non-radiative recombination processes.The incorporation of bismuth also induces alloy non-uniformity in the quantum well,leading to an increased photoluminescence linewidth.

引用

页码：512 / 515

页数：4

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