Nonlinear terahertz metamaterial perfect absorbers using GaAs[Invited]

被引：0

作者：

Xiaoguang Zhao ^{[1
]}

Jingdi Zhang ^{[2
]}

Kebin Fan ^{[1
]}

Guangwu Duan ^{[1
]}

Grace D.Metcalfe ^{[3
]}

Michael Wraback ^{[3
]}

Xin Zhang ^{[1
]}

Richard D.Averitt ^{[2
]}

机构：

[1] Department of Mechanical Engineering,Boston University

[2] Department of Physics,University of California

[3] Army Research Laboratory

来源：

Photonics Research | 2016年 / 03期

基金：

美国国家科学基金会;

关键词：

GaAs; In; Nonlinear terahertz metamaterial perfect absorbers using GaAs[Invited; THz;

D O I：

暂无

中图分类号：

TN304.23 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

We investigate the nonlinear response of terahertz(THz) metamaterial perfect absorbers consisting of electric split ring resonators on GaAs integrated with a polyimide spacer and gold ground plane. These perfect absorbers on bulk semi-insulating GaAs are characterized using high-field THz time-domain spectroscopy. The resonance frequency redshifts 20 GHz and the absorbance is reduced by 30% as the incident peak field is increased from 30 to 300 kV/cm. The nonlinear response arises from THz field driven interband transitions and intervalley scattering in the GaAs. To eliminate the Fresnel losses from the GaAs substrate, we design and fabricate a flexible metamaterial saturable perfect absorber. The ability to create nonlinear absorbers enables appealing applications such as optical limiting and self-focusing.

引用

页码：16 / 21

页数：6

共 6 条

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Slobozhanyuk, Alexey P.
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[J]. ADVANCED MATERIALS, 2013, 25 (25) : 3409 - 3412
[6] Threshold Energies for Electron-Hole Pair Production by Impact Ionization in Semiconductors .2 C.L.Anderson,C.R.Crowell. Phys.Rev.B . 1972

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