THE STUDY OF INTERFACE LAYER OF DIAMOND FILM AND GROWTH PROCESS

被引：0

作者：

DING Zhengming ZHANG Weidong ZHANG Zhiming Shanghai Jiao Tong University Shanghai P R CHINA ^{[200030
]}

机构：

来源：

真空科学与技术 | 1992年 / Z1期

关键词：

SIC; THE STUDY OF INTERFACE LAYER OF DIAMOND FILM AND GROWTH PROCESS;

D O I：

10.13922/j.cnki.cjovst.1992.z1.002

中图分类号：

学科分类号：

摘要：

<正> The interface layer of silicon substrates and diamond films is analyzed by SEM, AES, XPS methods in this paper, The results show clearly that there is a diffusion and bond-forming process between silicon substrates and active species (hydrogen. carbon sources). The interface layer is a gradual evolutional transition layer from Si to SiC and then to C. The early growth process of diamond films is also discussed here.

引用

页码：75 / 78

页数：4