Investigation on the intensity noise characteristics of the semiconductor ring laser

被引：0

作者：

康泽新 ^{[1
,2
]}

蔡鑫伦 ^{[2
]}

温晓东 ^{[1
]}

刘超 ^{[1
]}

简水生 ^{[1
]}

余思远 ^{[2
]}

机构：

[1] Key Laboratory of All Optical Network & Advanced Telecommunication Network of EMC,Institute of Lightwave Technology,Beijing Jiaotong University

[2] The Department of Electrical and Electronic Engineering,University of Bristol

来源：

Chinese Physics B | 2014年 / 02期

关键词：

semiconductor ring laser; relative intensity noise; low frequency noise enhancement;

D O I：

暂无

中图分类号：

TN248 [激光器];

学科分类号：

0803 ; 080401 ; 080901 ;

摘要：

Based on the frequency-domain multimode theoretical model,detailed investigations on the noise characteristic of the semiconductor ring laser(SRL)are first performed in this paper.The comprehensive nonlinear terms related to the third order nonlinear susceptibilityχ3are included in this model;the Langevin noise sources for electric field and carrier density fluctuations are also taken into account.As the injection current increases,the SRL may present several operation regimes.Remarkable and unusual low frequency noise enhancement in the form of a broad low frequency tail extending all the way to the relaxation oscillation peak is observed in any of the operation regimes of SRLs.The influences of the backscattering coefficient on the relative intensity noise(RIN)spectrum in typical operation regimes are investigated in detail.

引用

页码：266 / 273

页数：8

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