Quantum mechanical effects on heat generation in nano-scale MOSFETs

被引：0

作者：

吉敏 ^{[1
]}

赵凯 ^{[1
]}

杜刚 ^{[1
]}

康晋锋 ^{[1
]}

韩汝琦 ^{[1
]}

刘晓彦 ^{[1
]}

机构：

[1] Institute of Microelectronics, Peking University

来源：

Chinese Physics B | 2008年 / 17卷 / 05期

基金：

中国国家自然科学基金;

关键词：

heat generation; quantum potential; collision broadening;

D O I：

暂无

中图分类号：

TB383.1 [];

学科分类号：

070205 ; 080501 ; 1406 ;

摘要：

The Monte Carlo simulation is performed to investigate the quantum mechanical (QM) effects on heat generation in nano-scale metal oxide semiconductor field effect transistors (MOSFETs) by solving the quantum Boltzmann equation. The influence of QM effects both in real space and K space on the heat generation is investigated.

引用

页码：1869 / 1873

页数：5

共 13 条

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