Analysis of flatband voltage shift of metal/high-k/SiO2/Si stack based on energy band alignment of entire gate stack

被引：0
|
作者：
韩锴 [1 ]
王晓磊 [2 ]
徐永贵 [1 ]
杨红 [2 ]
王文武 [2 ]
机构：
[1] Department of Physics and Electronic Science, Weifang University
[2] Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
来源：
Chinese Physics B | 2014年 / 23卷 / 11期
关键词：
metal gate; high-k dielectric; band alignment; Vfbshift;
D O I：
暂无
中图分类号：
O481.1 [能带论];
学科分类号：
070205 ; 0805 ; 080502 ; 0809 ;
摘要：
A theoretical model of flatband voltage(VFB) of metal/high-k/SiO2/Si stack is proposed based on band alignment of entire gate stack, i.e., the VFBis obtained by simultaneously considering band alignments of metal/high-k, high-k/SiO2 and SiO2/Si interfaces, and their interactions. Then the VFBof TiN/HfO2/SiO2/Si stack is experimentally obtained and theoretically investigated by this model. The theoretical calculations are in good agreement with the experimental results.Furthermore, both positive VFBshift of TiN/HfO2/SiO2/Si stack and Fermi level pinning are successfully interpreted and attributed to the dielectric contact induced gap states at TiN/HfO2 and HfO2/SiO2 interfaces.
引用
收藏
页码：540 / 544
页数：5
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