Comparison of electrical characteristic between AlN/GaN and AlGaN/GaN heterostructure Schottky diodes

被引：0

作者：

吕元杰 ^{[1
]}

冯志红 ^{[1
]}

林兆军 ^{[2
]}

顾国栋 ^{[1
]}

敦少博 ^{[1
]}

尹甲运 ^{[1
]}

韩婷婷 ^{[1
]}

蔡树军 ^{[1
]}

机构：

[1] Science and Technology on Application-Specific Integrated Circuit Laboratory,Hebei Semiconductor Research Institute

[2] School of Physics,Shandong University

来源：

Chinese Physics B | 2014年 / 23卷 / 02期

关键词：

Al(Ga)N/GaN; Schottky barrier height; current-transport mechanism; leakage current;

D O I：

暂无

中图分类号：

TN311.7 [];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

Ni/Au Schottky contacts on AlN/GaN and AlGaN/GaN heterostructures are fabricated.Based on the measured current–voltage and capacitance–voltage curves,the electrical characteristics of AlN/GaN Schottky diode,such as Schottky barrier height,turn-on voltage,reverse breakdown voltage,ideal factor,and the current-transport mechanism,are analyzed and then compared with those of an AlGaN/GaN diode by self-consistently solving Schrdinger’s and Poisson’s equations.It is found that the dislocation-governed tunneling is dominant for both AlN/GaN and AlGaN/GaN Schottky diodes.However,more dislocation defects and a thinner barrier layer for AlN/GaN heterostructure results in a larger tunneling probability,and causes a larger leakage current and lower reverse breakdown voltage,even though the Schottky barrier height of AlN/GaN Schottky diode is calculated to be higher that of an AlGaN/GaN diode.

引用

页码：425 / 429

页数：5