Electron mobility limited by surface and interface roughness scattering in AlxGa1-xN/GaN quantum wells

被引：0

作者：

王建霞 ^{[1
]}

杨少延 ^{[1
]}

王俊 ^{[1
]}

刘贵鹏 ^{[1
]}

李志伟 ^{[1
]}

李辉杰 ^{[1
]}

金东东 ^{[1
]}

刘祥林 ^{[1
]}

朱勤生 ^{[1
]}

王占国 ^{[1
]}

机构：

[1] Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences

来源：

Chinese Physics B | 2013年 / 22卷 / 07期

基金：

国家高技术研究发展计划(863计划); 中国国家自然科学基金;

关键词：

AlGaN/GaN quantum wells; surface roughness scattering; polarization fields; mobility;

D O I：

暂无

中图分类号：

O471.1 [半导体量子理论];

学科分类号：

070205 ; 080501 ; 0809 ; 080903 ;

摘要：

The electron mobility limited by the interface and surface roughness scatterings of the two-dimensional electron gas in AlxGa1-xN/GaN quantum wells is studied. The newly proposed surface roughness scattering in the AlGaN/GaN quantum wells becomes effective when an electric field exists in the AlxGa1-xN barrier. For the AlGaN/GaN potential well, the ground subband energy is governed by the spontaneous and the piezoelectric polarization fields which are determined by the barrier and the well thicknesses. The thickness fluctuation of the AlGaN barrier and the GaN well due to the roughnesses cause the local fluctuation of the ground subband energy, which will reduce the 2DEG mobility.

引用

页码：463 / 466

页数：4