Improved performance of Ge n~+/p diode by combining laser annealing and epitaxial Si passivation

被引：0

作者：

王尘 ^{[1
]}

许怡红 ^{[2
]}

李成 ^{[3
]}

林海军 ^{[1
]}

机构：

[1] Fujian Provincial Key Laboratory of Optoelectronic Technology and Devices, School of Opto-electronic and Communiction Engineering,Xiamen University of Technology

[2] Xiamen Institute of Technology

[3] Department of Physics, Semiconductor Photonics Research Center, Xiamen University

来源：

Chinese Physics B | 2018年 / 27卷 / 01期

关键词：

epitaxial Si passivation; excimer laser annealing; Ge n~+/p junction;

D O I：

暂无

中图分类号：

TN31 [半导体二极管];

学科分类号：

0805 ; 080501 ; 080502 ; 080903 ;

摘要：

A method to improve Ge n~+/p junction diode performance by excimer laser annealing(ELA) and epitaxial Si passivation under a low ion implantation dose is demonstrated. The epitaxial Si passivation layer can unpin the Fermi level of the contact of Al/n-Ge to some extent and reduce the contact resistance. In addition, the fabricated Ge n~+/p junction diode by ELA plus epitaxial Si passivation exhibits a decreased reverse current density and an increased forward current density,resulting in a rectification ratio of about 6.5×10~6 beyond two orders magnitude larger than that by ELA alone. The reduced specific contact resistivity of metal on n-doped germanium and well-behaved germanium n~+/p diode are beneficial for the performance improvement of Ge n-MOSFETs and other opto-electronic devices.

引用

页码：602 / 605

页数：4