Improved performance of InGaN light-emitting diodes with a novel sawtooth-shaped electron blocking layer

被引:0
作者
王天虎 [1 ]
徐进良 [2 ]
机构
[1] Beijing Key Laboratory of New and Renewable Energy, North China Electric Power University
[2] Beijing Key Laboratory of Multiphase Flow and Heat Transfer, North China Electric Power University
关键词
light-emitting diodes; efficiency droop; electron blocking layer;
D O I
暂无
中图分类号
TN312.8 [];
学科分类号
0803 ;
摘要
A sawtooth-shaped electron blocking layer is proposed to improve the performance of light-emitting diodes (LEDs). The energy band diagram, the electrostatic field in the quantum well, the carrier concentration, the electron leakage, and the internal quantum efficiency are systematically studied. The simulation results show that the LED with a sawtooth-shaped electron blocking layer possesses higher output power and a smaller efficiency droop than the LED with a conventional AlGaN electron blocking layer, which is because the electron confinement is enhanced and the hole injection efficiency is improved by the appropriately modified electron blocking layer energy band.
引用
收藏
页码:730 / 735
页数:6
相关论文
共 1 条
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