Dependence of electrical and optical properties of IGZO films on oxygen flow

被引：2
|
作者：
石继锋 [1 ]
陈龙龙 [1 ]
李倩 [1 ]
李喜峰 [1 ]
张建华 [1 ]
机构：
[1] Key Laboratory of Advanced Display and System Application (Shanghai University),Ministry of Education
来源：
Advances in Manufacturing | 2011年 / 04期
关键词：
InGaZnO (IGZO); sputtering; contact resistance;
D O I：
暂无
中图分类号：
O484.42 [];
学科分类号：
080501 ; 1406 ;
摘要：
Amorphous InGaZnO (a-IGZO) films were deposited on the corning eagle XG (EXG) glass substrates using magnetron sputtering method.The structure,surface morphology,electrical and optical properties of these films were investigated by X-ray diffraction (XRD),scanning electron microscopy (SEM),semiconductor parameter analyzer and spectrophotometry,respectively.The influence of oxygen flow on the electrical properties of IGZO thin films was studied,showing that increasing oxygen flow changes the resistivity with six orders of magnitude.The contact resistance of ITO/IGZO is 7.35×10-2Ω·cm2,which suggests that a good ohmic contact exists between In2O3:Sn (ITO) and IGZO film.
引用
收藏
页码：242 / 244
页数：3
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