Influence of lateral size on dielectric properties of ferroelectric thin films with structure transition zones

被引：0

作者：

周静 ^{[1
]}

吕天全 ^{[1
]}

谢文广 ^{[2
]}

曹文武 ^{[1
,3
]}

机构：

[1] Center of Condensed Matter Science and Technology,Harbin Institute of Technology

[2] Department of Physical Science and Technology,Heilongjiang University

[3] Materials Research Institute,The Pennsylvania State University,University Park

来源：

Chinese Physics B | 2009年 / 18卷 / 07期

关键词：

ferroelectric thin film; transverse Ising model; dielectric properties;

D O I：

暂无

中图分类号：

O484.42 [];

学科分类号：

080501 ; 1406 ;

摘要：

By taking into account structural transition zones near the lateral and thickness direction edges,this paper uses a modified transverse Ising model to study dielectric properties of a finite size ferroelectric thin film in the framework of the mean-field approximation.The results indicate that the influence of the lateral size on the dielectric susceptibility cannot be neglected and lateral structural transition zones could be a crucial factor that improves the mean susceptibility of the fixed size film.

引用

页码：3054 / 3060

页数：7

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