Silicon Geiger mode avalanche photodiodes

被引：0

作者：

M. Mazzillo ^{[1
]}

G. Condorelli ^{[1
]}

D. Sanfilippo ^{[1
]}

G. Fallica ^{[1
]}

E. Sciacca ^{[2
]}

S. Aurite ^{[2
]}

S. Lombardo ^{[2
]}

E. Rimini ^{[2
]}

M. Belluso ^{[3
]}

S. Billotta ^{[3
]}

G. Bonanno ^{[3
]}

A. Campisi ^{[4
]}

L. Cosentino ^{[4
]}

P. Finocchiaro ^{[4
]}

F. Musumeci ^{[4
,5
]}

S. Privitera ^{[4
,5
]}

S. Tudisco ^{[4
,5
]}

机构：

[1] STMicroelectronics,R&D MPA,Stradale Primosole 50,95121 Catania,Italy.

[2] CNR-IMM,Stradale Primosole 50,95121 Catania,Italy.

[3] Osservatorio di Astrofisica,Via Santa Sofia 78,95123 Catania,Italy.

[4] INFN-Laboratori Nazionali del Sud,Via Santa Sofia 64,95125 Catania,Italy.

[5] DMFCI,Università di Catania,Viale Andrea Doria 6,95125 Catania,Italy.

来源：

Optoelectronics Letters | 2007年 / 03期

关键词：

mode; Silicon Geiger mode avalanche photodiodes;

D O I：

暂无

中图分类号：

TN312.7 [];

学科分类号：

0803 ;

摘要：

In this letter we present the results regarding the electrical and optical characterization of Geiger mode silicon avalanche photodiodes(GMAP) fabricated by silicon standard planar technology. Low dark count rates,negligible afterpulsing effects,good timing resolution and high quantum detection efficiency in all the visible range have been measured. The very good electro-optical performances of our photodiodes make them attractive for the fabrication of arrays with a large number of GMAP to be used both in the commercial and the scientific fields,as telecommunications and nuclear medical imaging.

引用

页码：177 / 180

页数：4