A high voltage silicon-on-insulator lateral insulated gate bipolar transistor with a reduced cell-pitch

被引:0
作者
罗小蓉 [1 ]
王琦 [1 ]
姚国亮 [1 ]
王元刚 [1 ]
雷天飞 [1 ]
王沛 [1 ]
蒋永恒 [1 ]
周坤 [1 ]
张波 [1 ]
机构
[1] State Key Laboratory of Electronic Thin Films and Integrated Devices,University of Electronic Science and Technology of China
基金
中国国家自然科学基金;
关键词
silicon-on-insulator; lateral insulated gate bipolar transistor; conductivity modulation; breakdown voltage; trench;
D O I
暂无
中图分类号
TN322.8 []; TM21 [绝缘材料、电介质及其制品];
学科分类号
0805 ; 080501 ; 080502 ; 080801 ; 080903 ;
摘要
A high voltage(> 600 V) integrable silicon-on-insulator(SOI) trench-type lateral insulated gate bipolar transistor(LIGBT) with a reduced cell-pitch is proposed.The LIGBT features multiple trenches(MTs):two oxide trenches in the drift region and a trench gate extended to the buried oxide(BOX).Firstly,the oxide trenches enhance electric field strength because of the lower permittivity of oxide than that of Si.Secondly,oxide trenches bring in multi-directional depletion,leading to a reshaped electric field distribution and an enhanced reduced-surface electric-field(RESURF) effect.Both increase the breakdown voltage(BV).Thirdly,oxide trenches fold the drift region around the oxide trenches,leading to a reduced cell-pitch.Finally,the oxide trenches enhance the conductivity modulation,resulting in a high electron/hole concentration in the drift region as well as a low forward voltage drop(Von).The oxide trenches cause a low anode-cathode capacitance,which increases the switching speed and reduces the turn-off energy loss(Eoff).The MT SOI LIGBT exhibits a BV of 603 V at a small cell-pitch of 24 μm,a Von of 1.03 V at 100 A/cm-2,a turn-off time of 250 ns and Eoff of 4.1×10?3 mJ.The trench gate extended to BOX synchronously acts as dielectric isolation between high voltage LIGBT and low voltage circuits,simplifying the fabrication processes.
引用
收藏
页码:433 / 437
页数:5
相关论文
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