Small-signal modeling of GaN HEMT switch with a new intrinsic elements extraction method

被引：0
|
作者：
耿苗 [1 ,2 ]
李培咸 [1 ]
罗卫军 [2 ]
孙朋朋 [2 ]
张蓉 [1 ,2 ]
马晓华 [1 ]
机构：
[1] School of Advanced Materials and Nanotechnology, Xidian University
[2] Key Laboratory of Microelectronics Devices & Integrated Technology, Institute of Microelectronics, Chinese Academy of Sciences
来源：
Chinese Physics B | 2016年 / 11期
关键词：
GaN high-electron-mobility transistor switch; small signal modeling; parameter extraction; error percentage;
D O I：
暂无
中图分类号：
TN386 [场效应器件];
学科分类号：
摘要：
A novel and accurate method is proposed to extract the intrinsic elements of the GaN high-electron-mobility transistor（HEMT） switch.The new extraction method is verified by comparing the simulated S-parameters with the measured data over the 5-40 GHz frequency range.The percentage errors E;within 3.83% show the great agreement between the simulated S-parameters and the measured data.
引用
收藏
页码：450 / 456
页数：7
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