Silicon light emitting device in CMOS technology

被引：0

作者：

LIU Hai-jun**

机构：

来源：

Optoelectronics Letters | 2007年 / 02期

关键词：

CMOS; Silicon light emitting device in CMOS technology;

D O I：

暂无

中图分类号：

TN383.1 [];

学科分类号：

摘要：

A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.

引用

页码：85 / 87

页数：3

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