Silicon light emitting device in CMOS technology

被引：0
|
作者：
LIU Hai-jun**
机构：
来源：
Optoelectronics Letters | 2007年 / 02期
关键词：
CMOS; Silicon light emitting device in CMOS technology;
D O I：
暂无
中图分类号：
TN383.1 [];
学科分类号：
摘要：
A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.
引用
收藏
页码：85 / 87
页数：3
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