Silicon light emitting device in CMOS technology

被引：0
|
作者：
LIU Hai-jun**
机构：
来源：
Optoelectronics Letters | 2007年 / 02期
关键词：
CMOS; Silicon light emitting device in CMOS technology;
D O I：
暂无
中图分类号：
TN383.1 [];
学科分类号：
摘要：
A novel silicon light emitting device was realized with standard 0.35μm 2P4M Mixed Mode/RF CMOS technology. The device functions in a reverse breakdown mode and can be turned on at 8.3 V and operated normally at a wide voltage range of 8.3 V-12.0 V. An output optical power of 13.6 nW was measured at the bias of 10 V and 100 mA, and the emitted light intensity was calculated to be more than 1 mW/cm2. The optical spectrum of the device is in the range of 500-820 nm.
引用
收藏
页码：85 / 87
页数：3
相关论文
共 50 条
  • [1] Silicon light emitting device in CMOS technology
    Liu H.-J.
    Gu M.
    Liu J.-B.
    Huang B.-J.
    Chen H.-D.
    Optoelectronics Letters, 2007, 3 (2) : 85 - 87
  • [2] Silicon light emitting device in CMOS technology
    State Key Lab. on Integrated Optoelectronics, Institute of Semiconductors, CAS, Beijing 100083, China
    Guangdianzi Jiguang, 2006, SUPPL. (302-304):
  • [3] Silicon light emitting devices in CMOS technology
    Chen Hong-Da
    Liu Hai-Jun
    Liu Jin-Bin
    Ming, Gu
    Huang Bei-Ju
    CHINESE PHYSICS LETTERS, 2007, 24 (01) : 265 - 267
  • [4] Silicon light emitting devices in CMOS technology
    State Key Lab. on Integrated Optoelectronics, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China
    Chin. Phys. Lett., 2007, 1 (265-267):
  • [5] A Low-Voltage Silicon Light Emitting Device in Standard Salicide CMOS Technology
    Wang Wei
    Huang Bei-Ju
    Dong Zan
    Liu Hai-Jun
    Zhang Xu
    Guan Ning
    Chen Jin
    Guo Wei-Lian
    Niu Ping-Juan
    Chen Hong-Da
    CHINESE PHYSICS LETTERS, 2010, 27 (04)
  • [6] A silicon light emitting devices in standard CMOS technology
    Chen, HD
    Sun, ZH
    Liu, HJ
    Gao, P
    2004 IST IEEE INTERNATIONAL CONFERENCE ON GROUP IV PHOTONICS, 2004, : 83 - 85
  • [7] Silicon light emitting devices in standard CMOS technology
    du Plessis, M
    Aharoni, H
    Snyman, LW
    2001 INTERNATIONAL SEMICONDUCTOR CONFERENCE, VOL 1 & 2, PROCEEDINGS, 2001, : 231 - 238
  • [8] Increased Efficiency of Silicon Light-Emitting Device in Standard Si-CMOS Technology
    Xu, Kaikai
    Yu, Qi
    Li, Guannpyng
    IEEE JOURNAL OF QUANTUM ELECTRONICS, 2015, 51 (08)
  • [9] On the Design and Optimization of Three-Terminal Light-Emitting Device in Silicon CMOS Technology
    Xu, Kaikai
    IEEE JOURNAL OF SELECTED TOPICS IN QUANTUM ELECTRONICS, 2014, 20 (04)
  • [10] Design and Realization of a Novel Poly-Silicon Light-Emitting Device Based on Standard CMOS Technology
    Ai Kang
    Cheng Junji
    Zhu Kunfeng
    Wu Kejun
    Liu Zhongyuan
    Liu Zhiwei
    Zhao Jianming
    Huang Lei
    Xu Kaikai
    CHINESE JOURNAL OF LASERS-ZHONGGUO JIGUANG, 2020, 47 (07):
12345