Influence of charge carrier injection at emitter electrode/emitter interface on the performance of metal-base organic transistors

被引：0
|
作者：
赵恺 [1 ]
邓家春 [1 ]
程晓曼 [1 ]
吴晓明 [1 ]
杨利营 [1 ]
华玉林 [1 ]
魏军 [1 ,2 ]
印寿根 [1 ]
机构：
[1] Key Laboratory of Display Materials and Photoelectric Devices of Education Ministry of China,Institute of Material Physics,and Tianjin Key Laboratory for Photoelectric Materials and Devices,Tianjin University of Technology
[2] Singapore Institute of Manufacturing Technology
来源：
OptoelectronicsLetters | 2010年 / 6卷 / 03期
基金：
中国国家自然科学基金;
关键词：
base; NPB;
D O I：
暂无
中图分类号：
TN32 [半导体三极管（晶体管）];
学科分类号：
0805 ; 080501 ; 080502 ; 080903 ;
摘要：
Pentacene-based metal-base organic transistors(MBOTs) are fabricated.The influence of the charge carrier injection efficiency at the emitter electrode/emitter interface on the device performance is investigated.It is found that the current modulation and the on/off ratio increase with the injection efficiency.By inserting poly(3,4-ethylenedioxythiophene)(PEDOT):PSS/m-MTDATA layers at the emitter electrode/emitter interface,the current modulation and the on/off ratio reach 6.7 mAcm-2 and 23,respectively.Meanwhile,the current gain is 95-96 in our experiment,which is almost independent on the injection efficiency.
引用
收藏
页码：195 / 198
页数：4
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